Ukumanzisa okukhethekile kwezinsimbi eziwuketshezi okubangelwa i-osmosis

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Lapha sibonisa izakhiwo zokumanzisa ezibangelwa yi-imbibition, ngokuzenzekelayo futhi ezikhethiwe zama-alloys ensimbi ewuketshezi asekelwe ku-gallium endaweni eyinsimbi enezici ze-microscale topographical.Ama-alloys ensimbi asekelwe ku-Gallium ayizinto ezimangalisayo ezinokushuba okukhulu kwendawo.Ngakho-ke, kunzima ukuwenza abe amafilimu amancane.Ukumanzisa okuphelele kwe-eutectic alloy ye-gallium ne-indium kwafinyelelwa endaweni yethusi enesakhiwo esincane lapho kukhona umhwamuko we-HCl, osuse i-oxide yemvelo kungxube yensimbi ewuketshezi.Lokhu kumanzisa kuchazwa ngokwezinombolo ngokusekelwe kumodeli ye-Wenzel kanye nenqubo ye-osmosis, okubonisa ukuthi usayizi we-microstructure ubalulekile ekumanziseni okuphumelelayo okubangelwa i-osmosis kwezinsimbi eziwuketshezi.Ngaphezu kwalokho, sibonisa ukuthi ukumanzisa okuzenzakalelayo kwezinsimbi eziwuketshezi kungaqondiswa ngokukhetha ezindaweni ezinesakhiwo esincane endaweni yensimbi ukuze kwakhe amaphethini.Le nqubo elula igqoka ngokulinganayo amajazi futhi ilolonge insimbi ewuketshezi phezu kwezindawo ezinkulu ngaphandle kwamandla angaphandle noma ukuphatha okuyinkimbinkimbi.Sibonise ukuthi ama-substrates anephethini yensimbi ewuketshezi agcina uxhumano lukagesi ngisho noma lunwetshiwe nangemuva kwemijikelezo ephindaphindiwe yokwelula.
I-Gallium based liquid alloys yensimbi (i-GaLM) idonsele ukunakwa okukhulu ngenxa yezindawo ezikhangayo ezifana nephuzu elincibilikayo eliphansi, ukuhanjiswa kukagesi okuphezulu, i-viscosity ephansi nokugeleza, ubuthi obuphansi kanye nokukhubazeka okuphezulu1,2.I-gallium ehlanzekile inendawo encibilikayo engaba ngu-30 °C, futhi uma ihlanganiswe ekwakhiweni kwe-eutectic nezinye izinsimbi ezifana ne-In ne-Sn, indawo yokuncibilika ingaphansi kwezinga lokushisa legumbi.Ama-GLM amabili abalulekile i-gallium indium eutectic alloy (EGaIn, 75% Ga kanye no-25% In ngesisindo, indawo encibilikayo: 15.5 °C) kanye ne-gallium indium tin eutectic alloy (GaInSn noma i-galinstan, 68.5% Ga, 21.5% In, kanye no-10) % ithini, indawo encibilikayo: ~11 °C)1.2.Ngenxa yokuguquguquka kwawo kagesi esigabeni soketshezi, ama-GaLM aphenywa ngenkuthalo njengemigudu ye-elekthronikhi eqinile noma ekhubazekile yezinhlelo zokusebenza ezihlukahlukene, okuhlanganisa izinzwa ezicijile noma ezigobile 10, 11, 12 ze-electronic3,4,5,6,7,8,9 , 13, 14 kanye nokuhola 15, 16, 17. Ukwakhiwa kwamathuluzi anjalo ngokufaka, ukuphrinta, namaphethini kusuka ku-GaLM kudinga ulwazi nokulawulwa kwezakhiwo ezihlangene zobuso be-GaLM kanye ne-substrate yayo engaphansi.Ama-GaLM ane-high surface tension (624 mNm-1 ku-EGaIn18,19 kanye no-534 mNm-1 ku-Galinstan20,21) okungawenza kube nzima ukuwaphatha noma ukuwaphatha.Ukwakheka koqweqwe oluqinile lwe-gallium oxide yomdabu endaweni ye-GaLM ngaphansi kwezimo ezizungezile kunikeza igobolondo elizinzisa i-GaLM esimweni esingesona esiyindilinga.Lesi sakhiwo sivumela i-GaLM ukuthi iphrintwe, ifakwe kuma-microchannels, futhi iphethini ngokuzinza kobuso obutholwa ngama-oxides19,22,23,24,25,26,27.Igobolondo le-hard oxide liphinde livumele i-GaLM ukuthi ibambelele ezindaweni eziningi ezibushelelezi, kodwa ivimbela izinsimbi ze-viscosity eziphansi ukuthi zigeleze ngokukhululeka.Ukusabalala kwe-GaLM ezindaweni eziningi kudinga amandla ukuze kuphuke igobolondo le-oxide28,29.
Amagobolondo e-oksidi angasuswa, isibonelo, ama-asidi aqinile noma izisekelo.Uma engekho ama-oxide, amafomu e-GaLM ehla cishe kuzo zonke izindawo ngenxa yokushuba okukhulu kwendawo, kodwa kukhona okuhlukile: I-GaLM imanzisa ama-substrates ensimbi.I-Ga yenza amabhondi ensimbi nezinye izinsimbi ngenqubo eyaziwa ngokuthi “i-reactive wetting”30,31,32.Lokhu kumanzisa okusebenzayo kuvame ukuhlolwa lapho engekho ama-oxide angaphezulu ukuze kube lula ukuthintana kwensimbi nensimbi.Kodwa-ke, ngisho nama-oxide omdabu e-GaLM, kuye kwabikwa ukuthi ukuxhumana kwensimbi kuya kwensimbi kuyakheka lapho ama-oxide ephuka lapho kuthintana nezindawo zensimbi ezibushelelezi29.Ukumanzisa okusebenzayo kubangela ama-engeli aphansi okuxhumana kanye nokumanzisa okuhle kwama-substrates amaningi ensimbi33,34,35.
Kuze kube manje, ucwaningo oluningi lwenziwe mayelana nokusetshenziswa kwezakhiwo ezivumayo zokumanzisa okusebenzayo kwe-GaLM ngezinsimbi ukwenza iphethini ye-GaLM.Isibonelo, i-GaLM isetshenziswe kumathrekhi ensimbi anephethini eqinile ngokugcoba, ukugoqa, ukufutha, noma ukufihla ithunzi34, 35, 36, 37, 38. Ukumanzisa okukhethekile kwe-GaLM ezinsimbi eziqinile kuvumela i-GaLM ukuthi yakhe amaphethini azinzile nachazwe kahle.Kodwa-ke, ukushuba okuphezulu kwendawo ye-GaLM kuvimbela ukwakheka kwamafilimu azacile afanayo kakhulu nakuma-substrates ensimbi.Ukubhekana nalolu daba, uLacour et al.ibike indlela yokukhiqiza amafilimu amancane e-GaLM abushelelezi, ayisicaba ezindaweni ezinkulu ngokuhwamulisa i-gallium emsulwa kuma-microstructured substrates ahlanganiswe ngegolide37,39.Le ndlela idinga ukufakwa kwe-vacuum, ehamba kancane kakhulu.Ngaphezu kwalokho, i-GaLM ngokuvamile ayivunyelwe kumadivayisi anjalo ngenxa ye-embrittlement engenzeka40.I-evaporation iphinde ifake izinto ku-substrate, ngakho iphethini iyadingeka ukuze kwakhiwe iphethini.Sifuna indlela yokudala amafilimu namaphethini e-GaLM abushelelezi ngokuklama izici zensimbi ze-topographic i-GaLM ezimanzisa ngokuzenzekelayo nangokukhetha lapho engekho ama-oxide emvelo.Lapha sibika ukumanzisa okuzenzakalelayo okukhethayo kwe-EGaIn engenayo i-oxide (i-GaLM evamile) kusetshenziswa ukuziphatha okuyingqayizivele kokumanzisa kuma-substrate ensimbi akhiwe ngezithombe.Sakha izakhiwo ezingaphezulu ezichazwe nge-photolithographically ezingeni elincane ukuze sifunde i-imbibition, ngaleyo ndlela silawule ukumanziswa kwezinsimbi eziwuketshezi ezingena-oxide.Izakhiwo zokumanzisa ezithuthukisiwe ze-EGaIn ezindaweni zensimbi ezinesakhiwo esincane zichazwa ngokuhlaziywa kwezinombolo okusekelwe kumodeli ye-Wenzel kanye nenqubo yokukhulelwa.Okokugcina, sibonisa ukubekwa kwendawo enkulu kanye nephethini ye-EGaIn ngokuzimunca, ngokuzenzekelayo kanye nokumanzisa okukhethekile ezindaweni zokubeka insimbi ezinesakhiwo esincane.Ama-electrode aqinile namageji ohlobo lwe-strain ahlanganisa izakhiwo ze-EGaIn ethulwa njengezinhlelo zokusebenza ezingase zibe khona.
Ukumuncwa ukuthuthwa kwe-capillary lapho uketshezi lungena endaweni eqoshiwe engu-41, okusiza ukusabalala koketshezi.Siphenye ukuziphatha kokumanzisa kwe-EGaIn ezindaweni ezinezakhi ezincane zensimbi ezifakwe kumhwamuko we-HCl (Fig. 1).Ithusi lakhethwa njengensimbi yendawo engaphansi. Ezindaweni zethusi eziyisicaba, i-EGaIn ibonise i-engeli yokuxhumana ephansi engu-<20° lapho kukhona umhwamuko we-HCl, ngenxa yokumanzisa okusebenzayo31 (I-Supplementary Fig. 1). Ezindaweni zethusi eziyisicaba, i-EGaIn ibonise i-engeli yokuxhumana ephansi engu-<20° lapho kukhona umhwamuko we-HCl, ngenxa yokumanzisa okusebenzayo31 (I-Supplementary Fig. 1). На плоских медных поверхностях EGaIn показал низкий краевой угол <20 ° в присутствии паров HCl из-за реактивного смачиванивания31 (дополния31). Ezindaweni zethusi eziyisicaba, i-EGaIn ibonise i-engeli yokuxhumana ephansi engu-<20° lapho kukhona umhwamuko we-HCl ngenxa yokumanzisa okusebenzayo31 (Umfanekiso Owengeziwe 1).在平坦的铜表面上,由于反应润湿,EGaIn 在存在HCl 蒸气的情况下显示<20° 的低接触角31(角31).在平坦的铜表面上,由于反应润湿,EGaIn在存在HCl На плоских медных поверхностях EGaIn демонстрирует низкие краевые углы <20 ° в присутствии паров HCl из-за реактивного смальпивания 1. Ezindaweni zethusi eziyisicaba, i-EGaIn ibonisa ama-engeli okuxhumana aphansi angu-<20° lapho kukhona umhwamuko we-HCl ngenxa yokumanzisa okusebenzayo (Umfanekiso Owengeziwe 1).Silinganise ama-engeli okuxhumana e-EGaIn ngenqwaba yethusi nakumafilimu ethusi afakwe ku-polydimethylsiloxane (PDMS).
ikholomu (D (ububanzi) = l (ibanga) = 25 µm, d (ibanga phakathi kwamakholomu) = 50 µm, H (ubude) = 25 µm) kanye nephiramidi (ububanzi = 25 µm, ubude = 18 µm) izakhiwo ezincane ku-Cu /PDMS substrates.b Izinguquko ezincike esikhathini ku-engeli yokuxhumana kuma-substrates ayisicaba (ngaphandle kwama-microstructures) kanye nezinhlu zezinsika namaphiramidi aqukethe i-PDMS embozwe ngethusi.c, d Ukurekhoda kwesikhashana (c) kokubuka okuseceleni kanye (d) nokubuka okuphezulu kwe-EGaIn emanzisa phezu kwezinsika lapho kukhona umhwamuko we-HCl.
Ukuze kuhlolwe umphumela we-topography ekumanziseni, ama-substrates e-PDMS anephethini ye-columnar kanye ne-pyramidal yalungiswa, lapho ithusi lalifakwe khona ngesendlalelo se-titanium adhesive (Fig. 1a).Kwaboniswa ukuthi i-microstructured surface ye-substrate ye-PDMS yayihlanganiswe ngokusemthethweni ngethusi (I-Supplementary Fig. 2).Ama-engeli okuxhumana ancike esikhathini we-EGaIn ku-PDMS enephethini ne-planar copper-sputtered (Cu/PDMS) aboniswa kumakhiwane.1b.I-engeli yokuxhumana ye-EGaIn ku-copper/PDMS enephethini yehla iye ku-0° phakathi no-~1 min.Ukumanzisa okuthuthukisiwe kwama-microstructures e-EGaIn kungase kusetshenziswe i-equation ye-Wenzel\({{{\rm{cos}}}}}}\,{\theta}_{{rough}}=r\,{{ {{{ \rm{ cos}}}}}\,{\theta}_{0}\), lapho \({\theta}_{{rough}}\) imele i-engeli yokuxhumana yendawo emagebhugebhu, \ (r \) Ukuma Kobuso (= indawo yangempela/indawo esobala) kanye ne-engeli yokuxhumana endizeni \({\theta}_{0}\).Imiphumela yokumanzisa okuthuthukisiwe kwe-EGaIn ezindaweni ezinephethini ivumelana kahle nemodeli ye-Wenzel, njengoba amanani angu-r ezindawo ezinephethini yangemuva nephiramidi engu-1.78 kanye no-1.73, ngokulandelana.Lokhu futhi kusho ukuthi ukwehla kwe-EGaIn endaweni enephethini kuzongena emiseleni yokukhululeka okungaphansi.Kubalulekile ukuqaphela ukuthi amafilimu ayisicaba afanayo kakhulu akhiwa kuleli cala, ngokungafani necala le-EGaIn ezindaweni ezingahlelekile (I-Supplementary Fig. 1).
Kusukela emkhiwaneni.I-1c,d (i-Supplementary Movie 1) kungabonakala ukuthi ngemva kwe-30s, njengoba i-engeli yokuxhumana ebonakalayo isondela ku-0°, i-EGaIn iqala ukuhlakazeka kakhulu kude nomkhawulo wokudonsa, okubangelwa ukumuncwa (I-Supplementary Movie 2 kanye ne-Supplementary Umfanekiso wesi-3).Ucwaningo lwangaphambilini lwezindawo eziyisicaba zihlobanise isikali sesikhathi sokumanzisa okusebenzayo kanye noguquko ukusuka kokumanzisa okune-inertial ukuya kokumanzisa kwe-viscous.Ubukhulu bendawo bungenye yezinto ezibalulekile ekunqumeni ukuthi ingabe ukuzikhukhumeza kuyenzeka.Ngokuqhathanisa amandla angaphezulu ngaphambi nangemuva kwe-imbibition endaweni yokubuka ye-thermodynamic, i-engeli ebalulekile yokuxhumana \({\theta}_{c}\)ye-imbibition yatholwa (bona Ingxoxo Eyengeziwe ukuze uthole imininingwane).Umphumela \({\theta}_{c}\) uchazwa ngokuthi \({{({{\rm{cos)))))))\,{\theta}_{c}=(1-{\) phi } _{S})/(r-{\phi}_{S})\) lapho \({\phi}_{s}\) imele indawo eyiqhezu phezulu kokuthunyelwe kanye \(r\) ) imele ubuhwaqane obungaphezulu. I-imbibition ingenzeka uma \({\theta }_{c}\) > \({\theta }_{0}\), okungukuthi, i-engeli yokuxhumana endaweni eyisicaba. I-imbibition ingenzeka uma \({\theta }_{c}\) > \({\theta }_{0}\), okungukuthi, i-engeli yokuxhumana endaweni eyisicaba. Впитывание может происходить, когда \ ({\ theta } _ {c} \) > \ ({\ theta } _ {0} \), т.е.контактный угол на плоской поверхности. Ukumuncwa kungenzeka uma \({\theta }_{c}\) > \({\theta }_{0}\), okungukuthi i-engeli yokuxhumana endaweni eyisicaba.当\({\theta }_{c}\) > \({\theta }_{0}\),即平面上的接触角时,会发生吸吸。当\({\theta }_{c}\) > \({\theta }_{0}\),即平面上的接触角时,会发生吸吸。 Всасывание происходит, когда \ ({\ theta} _ {c} \) > \ ({\ theta} _ {0} \), контактный угол на плоскости. Ukudonsa kwenzeka lapho \({\theta }_{c}\) > \({\theta }_{0}\), i-angle yokuxhumana endizeni.Ezindaweni ezinephethini yangemuva, \(r\) kanye \({\phi}_{s}\) zibalwa njengokuthi \(1+\{(2\pi {RH}))/{d}^{2} \ } \ ) kanye \(\pi {R}^{2}/{d}^{2}\), lapho \(R\) imele iradiyasi yekholomu, \(H\) imele ubude bekholomu, futhi \ ( d\) ibanga phakathi kwezikhungo zezinsika ezimbili (Fig. 1a).Okwendawo eyakhiwe ngemuva komkhiwane.1a, i-engeli \({\theta}_{c}\) ingu-60°, enkulu kunendiza \({\theta}_{0}\) (~25° ) ku-HCl vapor Oxide-free EGaIn ku-Cu/PDMS.Ngakho-ke, amaconsi e-EGaIn angahlasela kalula indawo yokubeka ithusi ehlelekile ku-Fig. 1a ngenxa yokumuncwa.
Ukuze siphenye umthelela wosayizi wendawo yephethini ekumanzini nasekumunceni kwe-EGaIn, siguqule usayizi wezinsika ezimbozwe ngethusi.Emkhiwaneni.2 ikhombisa ama-engeli okuxhumana kanye nokumuncwa kwe-EGaIn kulawa ma-substrates.Ibanga l phakathi kwamakholomu lilingana nobubanzi bekholomu D futhi lisukela ku-25 kuya ku-200 μm.Ubude obungu-25 µm buhlala njalo kuwo wonke amakholomu.\({\theta}_{c}\) incipha ngosayizi wekholomu okhulayo (Ithebula 1), okusho ukuthi mancane amathuba okuba ukumuncwa kuma-substrates anamakholomu amakhulu.Kubo bonke osayizi abahloliwe, \({\theta}_{c}\) mkhulu kune-\({\theta}_{0}\) futhi i-wicking ilindelekile.Nokho, ukumuncwa akuvamile ukubonwa ezindaweni ezinephethini engemuva nge-l no-D 200 µm (Fig. 2e).
i-engeli yokuxhumana encike esikhathini ye-EGaIn endaweni ye-Cu/PDMS enamakholomu osayizi abahlukene ngemva kokuchayeka kumusi we-HCl.b–e Ukubuka okuphezulu nokusemaceleni kwe-EGaIn yokumanzisa.b D = l = 25 µm, r = 1.78.ku-D = l = 50 μm, r = 1.39.dD = l = 100 µm, r = 1.20.eD = l = 200 µm, r = 1.10.Wonke amaposi anobude obungu-25 µm.Lezi zithombe zithathwe okungenani imizuzu eyi-15 ngemuva kokuchayeka kumusi we-HCl.Amaconsi ku-EGaIn angamanzi avela ekuphenduleni phakathi kwe-gallium oxide nomhwamuko we-HCl.Wonke amabha esikali ku-(b – e) angu-2 mm.
Esinye isimo sokunquma ukuthi kungenzeka yini ukumuncwa uketshezi ukuqiniswa koketshezi endaweni ngemva kokusetshenziswa kwephethini.Kurbin et al.Kubikwe ukuthi uma (1) amaposi ephakeme ngokwanele, amaconsi azomuncwa indawo enephethini;(2) ibanga eliphakathi kwamakholomu lincane;futhi (3) i-engeli yokuxhumana yoketshezi olungaphezulu incane ngokwanele42.Ngokwenombolo \({\theta}_{0}\) yoketshezi endizeni equkethe into efanayo ye-substrate kufanele ibe ngaphansi kwe-engeli ebalulekile yokuxhumana yokuphinwa, \({\theta}_{c,{pin)) } \ ), ukuze kuthathwe ngaphandle kokuphina phakathi kokuthunyelwe, lapho \({\theta}_{c,{pin}}={{{{\rm{arctan}}}}}}}(H/\big \{ ( \ sqrt {2}-1)l\big\})\) (bona ingxoxo eyengeziwe ukuze uthole imininingwane).Inani elithi \({\theta}_{c,{pin}}\) lincike kusayizi wephinikhodi (Ithebula 1).Nquma ipharamitha engena-Dimensionless L = l/H ukuze wahlulele ukuthi ukumuncwa kuyenzeka.Ukuze amunce, u-L kumelwe abe ngaphansi kwezinga elilinganiselwe, \({L}_{c}\) = 1/\(\big\{\big(\sqrt{2}-1\big){{\tan} } {\ theta}_{{0}\nkulu\}\).Ku-EGaIn \(({\theta}_{0}={25}^{\circ}))\) ku-substrate yethusi \({L}_{c}\) ngu-5.2.Njengoba ikholomu engu-L ka-200 μm ingu-8, elikhulu kunenani elithi \({L}_{c}\), ukumuncwa kwe-EGaIn akwenzeki.Ukuze siqhubeke sihlola umthelela wejiyomethri, sabona ukuzilungiselela kwezinhlobonhlobo ze-H no-l (I-Supplementary Fig. 5 kanye neThebula Lokwengeza 1).Imiphumela ivumelana kahle nezibalo zethu.Ngakho-ke, i-L iphenduka isibikezelo esisebenzayo sokumuncwa;insimbi ewuketshezi iyeka ukumunca ngenxa yokuphina lapho ibanga phakathi kwezinsika likhulu uma liqhathaniswa nobude bezinsika.
Ukumanzisa kunganqunywa ngokusekelwe ekubunjweni kwendawo ye-substrate.Siphenye umthelela wokubunjwa kwendawo ekumanziseni nasekumunceni i-EGaIn ngokuhlanganisa i-Si ne-Cu ezinsikeni nasezindizeni (I-Supplementary Fig. 6).I-engeli yokuxhumana ye-EGaIn iyehla isuka kokuthi ~160° iye ku-80° njengoba indawo kanambambili ye-Si/Cu inyuka isuka ku-0 iye ku-75% kokuqukethwe kwethusi eliyisicaba.Endaweni engu-75% Cu/25% Si, \({\theta}_{0}\) ingu-~80°, ehambisana nokuthi \({L}_{c}\) okulingana no-0.43 ngokwencazelo engenhla .Ngenxa yokuthi amakholomu l = H = 25 μm ano-L alingana no-1 omkhulu kunomkhawulo \({L}_{c}\), indawo engu-75% Cu/25% Si ngemva kokwenza iphethini ayimundi ngenxa yokunganyakazi.Njengoba i-engeli yokuxhumana ye-EGaIn ikhuphuka ngokungezwa kwe-Si, u-H ophakeme noma u-l ophansi uyadingeka ukuze kunqobe ukuphina nokukhulelwa.Ngakho-ke, njengoba i-engeli yokuxhumana (okungukuthi \({\theta}_{0}\)) incike ekwakhekeni kwamakhemikhali okungaphezulu, ingaphinda inqume ukuthi i-imbibition iyenzeka ku-microstructure.
Ukumuncwa kwe-EGaIn kuthusi/i-PDMS enephethini kungamanzisa insimbi ewuketshezi ibe amaphethini awusizo.Ukuze kuhlolwe inani elincane lemigqa yekholomu ebangela ukungezwani, izici zokumanzisa ze-EGaIn zibonwe ku-Cu/PDMS ngemigqa yephethini yangemuva equkethe izinombolo zomugqa wekholomu ezihlukene ukusuka ku-1 ukuya ku-101 (Umfanekiso 3).Ukumanzisa kwenzeka kakhulu endaweni ye-post-patterning.I-EGaIn wicking ibhekwe ngendlela enokwethenjelwa futhi nobude be-wicking banda ngenani lemigqa yamakholomu.Ukumuncwa cishe akungenzeki uma kukhona okuthunyelwe okunemigqa emibili noma ngaphansi.Lokhu kungase kube ngenxa yokwanda komfutho we-capillary.Ukuze ukumuncwa kwenzeke kuphethini yekholomu, ukucindezela kwe-capillary okubangelwa ukugoba kwekhanda le-EGaIn kufanele kunqotshwe (I-Fig. 7 Eyengeziwe).Uma kubhekwa irediyasi yokugoba engu-12.5 µm kumugqa owodwa wekhanda le-EGaIn elinephethini yekholomu, umfutho we-capillary ungu-~0.98 atm (~740 Torr).Lo mfutho we-Laplace ophezulu ungavimbela ukumanzisa okubangelwa ukumuncwa kwe-EGaIn.Futhi, imigqa embalwa yamakholomu inganciphisa amandla okumunca ngenxa yesenzo se-capillary phakathi kwe-EGaIn namakholomu.
amaconsi e-EGaIn ku-Cu/PDMS ehlelekile enamaphethini obubanzi obuhlukene (w) emoyeni (ngaphambi kokuchayeka kumusi we-HCl).Imigqa yama-rack eqala phezulu: 101 (w = 5025 µm), 51 (w = 2525 µm), 21 (w = 1025 µm), kanye no-11 (w = 525 µm).b Ukumanzisa okuqondisayo kwe-EGaIn ku-(a) ngemva kokuchayeka kumusi we-HCl imizuzu eyi-10.c, d Ukumanzisa kwe-EGaIn ku-Cu/PDMS enezakhiwo zekholomu (c) imigqa emibili (w = 75 µm) kanye (d) nomugqa owodwa (w = 25 µm).Lezi zithombe zithathwe emizuzwini eyi-10 ngemuva kokuchayeka kumusi we-HCl.Amabha esikali ku-(a, b) kanye (c, d) angu-5 mm no-200 µm, ngokulandelanayo.Imicibisholo eku-(c) ibonisa ukugoba kwekhanda le-EGaIn ngenxa yokumuncwa.
Ukumuncwa kwe-EGaIn ku-post-patterned Cu/PDMS kuvumela i-EGaIn ukuthi yakheke ngokumanzisa okukhethekile (Fig. 4).Uma iconsi le-EGaIn libekwe endaweni enephethini futhi livezwa kumusi we-HCl, ukwehla kwe-EGaIn kuyawa kuqala, kwenze i-engeli encane yokuxhumana njengoba i-asidi isusa isikali.Kamuva, ukumuncwa kuqala kusuka emaphethelweni okwehla.Iphethini yendawo enkulu ingafinyelelwa kusuka ku-EGaIn yesikali sesentimitha (Fig. 4a, c).Njengoba ukumuncwa kwenzeka kuphela endaweni ezungezile, i-EGaIn imanzisa kuphela indawo yephethini futhi icishe iyeke ukumanzisa lapho ifika endaweni eyisicaba.Ngenxa yalokho, imingcele ebukhali yamaphethini we-EGaIn ibonwa (Fig. 4d, e).Emkhiwaneni.I-4b ibonisa ukuthi i-EGaIn ingena kanjani endaweni engahlelekile, ikakhulukazi endaweni lapho i-droplet ye-EGaIn yayibekwe khona ekuqaleni.Lokhu kwakungenxa yokuthi ububanzi obuncane kakhulu bamaconsi e-EGaIn asetshenziswe kulolu cwaningo lweqe ububanzi bezinhlamvu ezinephethini.Amaconsi e-EGaIn abekwe endaweni yephethini ngomjovo owenziwe ngesandla ngenaliti engu-27-G nesirinji, okuholele ekubeni amathonsi anobukhulu obuncane obungu-1 mm.Le nkinga ingaxazululwa ngokusebenzisa amaconsi amancane e-EGaIn.Sekukonke, Umfanekiso wesi-4 ubonisa ukuthi ukumanzisa okuzenzakalelayo kwe-EGaIn kunganxenxwa futhi kuqondiswe ezindaweni ezinesakhiwo esincane.Uma kuqhathaniswa nomsebenzi wangaphambilini, le nqubo yokumanzisa iyashesha futhi akukho mandla angaphandle adingekayo ukuze kuzuzwe ukumanziswa okuphelele (Ithebula Lokwengeza 2).
uphawu lwenyuvesi, uhlamvu b, c ngesimo sombani.Isifunda esimuncayo simbozwe ngohlu lwamakholomu ano-D = l = 25 µm.d, izithombe ezikhulisiwe zezimbambo ku-e (c).Amabha esikali ku-(a–c) kanye no-(d,e) angu-5 mm no-500 µm, ngokulandelanayo.Vuliwe (c–e), amaconsi amancane phezulu ngemva kokukhangiswa aphenduka abe amanzi njengomphumela wokusabela phakathi kwe-gallium oxide nomhwamuko we-HCl.Akukho mphumela obalulekile wokwakheka kwamanzi ekumanziseni obonwe.Amanzi asuswa kalula ngenqubo elula yokomisa.
Ngenxa yemvelo yoketshezi ye-EGaIn, i-EGaIn coated Cu/PDMS (EGaIn/Cu/PDMS) ingasetshenziselwa ama-electrode aguquguqukayo nanwebeka.Umfanekiso 5a uqhathanisa izinguquko zokumelana ne-Cu/PDMS yasekuqaleni kanye ne-EGaIn/Cu/PDMS ngaphansi kwemithwalo ehlukene.Ukumelana kwe-Cu/PDMS kukhuphuka kakhulu ekucindezelekeni, kuyilapho ukumelana kwe-EGaIn/Cu/PDMS kuhlala kuphansi ekucindezelekeni.Emkhiwaneni.I-5b kanye ne-d ibonisa izithombe ze-SEM kanye nedatha ye-EMF ehambisanayo ye-Cu/PDMS eluhlaza kanye ne-EGaIn/Cu/PDMS ngaphambi nangemuva kokusetshenziswa kwamandla kagesi.Ku-Cu/PDMS engaguquki, ukuwohloka kungabangela ukuqhekeka kwefilimu ye-Cu eqinile efakwe ku-PDMS ngenxa yokungafani kokuqina.Ngokuphambene, ku-EGaIn/Cu/PDMS, i-EGaIn isamboza kahle i-Cu/PDMS substrate futhi igcina ukuqhubeka kukagesi ngaphandle kokuqhekeka noma ukuwohloka okuphawulekayo ngisho nangemva kokusetshenziswa kobunzima.Idatha ye-EDS iqinisekise ukuthi i-gallium ne-indium evela ku-EGaIn yasatshalaliswa ngokulinganayo ku-substrate ye-Cu/PDMS.Kuyaphawuleka ukuthi ubukhulu befilimu ye-EGaIn buyafana futhi buqhathaniswa nokuphakama kwezinsika. Lokhu kuqinisekiswa nokuhlaziywa okuqhubekayo kwe-topographical, lapho umehluko ohlobene phakathi kokuqina kwefilimu ye-EGaIn nokuphakama kokuthunyelwe kungu-<10% (I-Supplementary Fig. 8 kanye neThebula 3). Lokhu kuqinisekiswa nokuhlaziywa okuqhubekayo kwe-topographical, lapho umehluko ohlobene phakathi kokuqina kwefilimu ye-EGaIn nokuphakama kokuthunyelwe kungu-<10% (I-Supplementary Fig. 8 kanye neThebula 3). Это также подтверждается дальнейшим топографическим анализом, где относительная разница между толщиной пленки EGaIn and выпльзото % ‧ isiqephu 8 nesi-3). Lokhu kuqinisekiswa nokuhlaziywa okwengeziwe kokuma kwendawo, lapho umehluko ohlobene phakathi kogqinsi lwefilimu ye-EGaIn nobude bekholomu ingu-<10% (I-Supplementary Fig. 8 kanye neThebula 3).进一步的形貌分析也证实了這一点,其中EGaIn 薄膜厚度与柱子高度之间的相对差异 <10%血。 <10% Это также было подтверждено дальнейшим топографическим анализом, где относительная разница между толщиной пленки EGaIn and выпльзото% выпльзото isiqephu 8 nesi-3). Lokhu kuphinde kwaqinisekiswa ngokuhlaziywa okwengeziwe kokuma kwendawo, lapho umehluko ohlobene phakathi kogqinsi lwefilimu ye-EGaIn nobude bekholomu ubungu-<10% (I-Supplementary Fig. 8 kanye neThebula 3).Lokhu kumanzisa okusekelwe embonweni kuvumela ukushuba kwezingubo ze-EGaIn ukuthi zilawuleke kahle futhi zigcinwe zizinzile ezindaweni ezinkulu, okuyinto eyinselele ngenye indlela ngenxa yemvelo yayo yoketshezi.Izibalo 5c kanye no-e ziqhathanisa ukuhamba nokumelana nokuguquguquka kwe-Cu/PDMS yasekuqaleni kanye ne-EGaIn/Cu/PDMS.Kudemo, i-LED ivuliwe uma ixhunywe kuma-electrode e-Cu/PDMS noma e-EGaIn/Cu/PDMS engathintwa.Uma i-Cu/PDMS engashintshile yeluliwe, i-LED iyacisha.Kodwa-ke, ama-electrode e-EGaIn/Cu/PDMS ahlala exhumeke ngogesi ngisho nangaphansi komthwalo, futhi ukukhanya kwe-LED kwafiphala kancane ngenxa yokwanda kokumelana nama-electrode.
Ukushintsha kokumelana okujwayelekile ngomthwalo okhulayo ku-Cu/PDMS kanye ne-EGaIn/Cu/PDMS.b, d Izithombe ze-SEM nokuhlaziywa kwe-X-ray spectroscopy (EDS) ehlakaza amandla ngaphambi (phezulu) nangemuva (phansi) kwama-polydiplexes alayishwe ku-(b) Cu/PDMS kanye (d) ne-EGaIn/Cu/methylsiloxane.c, e Ama-LED anamathiselwe ku-(c) Cu/PDMS kanye (e) ne-EGaIn/Cu/PDMS ngaphambi (phezulu) nangemuva (phansi) kokunwebeka (~30%).Ibha yesikali ku-(b) kanye no-(d) ingama-50 µm.
Emkhiwaneni.I-6a ikhombisa ukumelana kwe-EGaIn/Cu/PDMS njengomsebenzi wobunzima obusuka ku-0% ukuya ku-70%.Ukwanda nokubuyiselwa kokumelana kuhambisana nokuguquguquka, okuvumelana kahle nomthetho we-Pouillet wezinto ezingenakucindezelwa (R/R0 = (1 + ε)2), lapho u-R engukumelana, u-R0 ukuphikiswa kokuqala, ε uhlobo lwe-43. Olunye ucwaningo luye lwabonisa ukuthi uma Uma zeluliwe, izinhlayiya eziqinile endaweni ewuketshezi zingazihlela kabusha futhi zisakazwe ngokulinganayo ngokuhlangana okungcono, ngaleyo ndlela zinciphise ukwanda kokudonsa okungu-43, 44. Kulo msebenzi, noma kunjalo, umqhubi u> 99% wensimbi ewuketshezi ngevolumu njengoba amafilimu e-Cu ewugqinsi we-100 nm kuphela. Kulo msebenzi, noma kunjalo, umqhubi u> 99% wensimbi ewuketshezi ngevolumu njengoba amafilimu e-Cu ewugqinsi we-100 nm kuphela. Однако в этой работе проводник состоит из >99% жидкого металла по объему, так как пленки Cu имеют толщину всего 100 нм. Kodwa-ke, kulo msebenzi, umqhubi uqukethe> 99% insimbi ye-liquid ngevolumu, njengoba amafilimu e-Cu angu-100 nm kuphela.然而,在這项工作中,由于Cu 薄膜只有100 nm 厚,因此导体是>99% 的液态金属(按体积计).然而,在這项工作中,由于Cu 薄膜只有100 nm 厚,因此导体是>99%Kodwa-ke, kulo msebenzi, njengoba ifilimu ye-Cu ingama-nm ayi-100 kuphela, umqhubi uqukethe insimbi engaphezu kuka-99% yensimbi (ngevolumu).Ngakho-ke, asilindele ukuthi i-Cu izoba negalelo elikhulu kuzakhiwo ze-electromechanical zabaqhubi.
Ushintsho olujwayelekile ekumelaneni kwe-EGaIn/Cu/PDMS uma kuqhathaniswa nobunzima ebangeni elingu-0–70%.Ukucindezeleka okukhulu okufinyelelwe ngaphambi kokuhluleka kwe-PDMS kwakuyi-70% (I-Supplementary Fig. 9).Amachashazi abomvu amanani etiyori abikezelwa ngumthetho kaPuet.b Ukuhlolwa kokuzinza kwe-EGaIn/Cu/PDMS phakathi nemijikelezo yokwelula ephindaphindiwe.Kusetshenziswe uhlobo lwe-30% ekuhlolweni kwe-cyclic.Ibha yesikali ku-inset ingu-0.5 cm.L ubude bokuqala be-EGaIn/Cu/PDMS ngaphambi kokunwetshwa.
Isici sokulinganisa (GF) siveza ukuzwela kwenzwa futhi sichazwa njengesilinganiso soshintsho ekumelaneni noshintsho ku-strain45.I-GF inyuke isuka ku-1.7 ku-10% yobunzima yaya ku-2.6 ngobunzima obungama-70% ngenxa yoshintsho lwejometri yensimbi.Uma kuqhathaniswa namanye amageji ohlobo, inani le-GF EGaIn/Cu/PDMS limaphakathi.Njengenzwa, nakuba i-GF yayo ingase ingabi phezulu kakhulu, i-EGaIn/Cu/PDMS ibonisa ukuguqulwa kokumelana okuqinile ekuphenduleni isignali ephansi kumthwalo wesilinganiso somsindo.Ukuze kuhlolwe ukuzinza kwe-conductivity ye-EGaIn/Cu/PDMS, ukumelana kukagesi kwagadwa phakathi nemijikelezo yokwelula ephindaphindiwe ngo-30% wobunzima.Njengoba kuboniswe emkhiwaneni.I-6b, ngemva kwemijikelezo yokwelula ye-4000, inani lokumelana lahlala ngaphakathi kwe-10%, okungenzeka kube ngenxa yokwakheka okuqhubekayo kwesikali phakathi nemijikelezo yokwelula ephindaphindiwe46.Ngakho-ke, ukuzinza kukagesi kwesikhathi eside kwe-EGaIn/Cu/PDMS njenge-electrode elula nokuthembeka kwesignali njenge-strain gauge kwaqinisekiswa.
Kulesi sihloko, sixoxa ngezakhiwo zokumanzisa ezithuthukisiwe ze-GaLM ezindaweni zensimbi ezinesakhiwo esincane esibangelwa ukungeniswa.Ukumanzisa okuphelele okuzenzakalelayo kwe-EGaIn kwafinyelelwa endaweni eyinsimbi eyikholomu kanye nephiramidi lapho kukhona umhwamuko we-HCl.Lokhu kungachazwa ngezinombolo ngokusekelwe kumodeli ye-Wenzel kanye nenqubo yokuxhuma, ebonisa usayizi we-post-microstructure edingekayo ekumanziseni okubangelwa ama-wicking.Ukumanzisa okuzenzakalelayo nokukhethayo kwe-EGaIn, eqondiswa indawo yensimbi enesakhiwo esincane, kwenza kube nokwenzeka ukufaka izimbotshana ezifanayo ezindaweni ezinkulu futhi kwakhe amaphethini ensimbi ewuketshezi.Ama-substrates e-ECaIn-coated Cu/PDMS agcina ukuxhumana kukagesi ngisho nalapho zeluliwe nangemuva kwemijikelezo yokwelula ephindaphindiwe, njengoba kuqinisekiswe i-SEM, i-EDS, nezilinganiso zokumelana nogesi.Ukwengeza, ukumelana kukagesi kwe-Cu/PDMS okuhlanganiswe ne-EGaIn kushintsha ngokuhlehlayo nangokuthembekile ngokulingana nohlobo olusetshenzisiwe, okubonisa ukusebenza kwalo okungaba khona njengenzwa yokucindezeleka.Izinzuzo ezingaba khona ezihlinzekwa yisimiso sokumanzisa insimbi ewuketshezi okubangelwa i-imbibition zimi kanje: (1) Ukugcoba kwe-GaLM nokwenza iphethini kungafinyelelwa ngaphandle kwamandla angaphandle;(2) Ukumanzisa kwe-GaLM endaweni ye-microstructure ehlanganiswe ngethusi kuyi-thermodynamic.umphumela wefilimu we-GaLM uzinzile ngisho nangaphansi kokuguqulwa;(3) ukushintsha ubude bekholomu eboshwe ngethusi kungakha ifilimu ye-GaLM enogqinsi olulawulwayo.Ngaphezu kwalokho, le ndlela inciphisa inani le-GaLM elidingekayo ukuze kwakhiwe ifilimu, njengoba izinsika zithatha ingxenye yefilimu.Isibonelo, lapho kwethulwa uxhaxha lwezinsika ezinobubanzi obungu-200 μm (nebanga phakathi kwezinsika ezingu-25 μm), ivolumu ye-GaLM edingekayo ukuze kwakhiwe ifilimu (~9 μm3/μm2) iqhathaniswa nevolumu yefilimu izinsika.(25 µm3/µm2).Kodwa-ke, kulokhu, kufanele kucatshangelwe ukuthi ukuphikiswa kwethiyori, okulinganiselwa ngokomthetho kaPuet, kwandisa izikhathi eziyisishiyagalolunye.Sekukonke, izici eziyingqayizivele zokumanzisa zezinsimbi eziwuketshezi okuxoxwe ngazo kulesi sihloko zinikeza indlela ephumelelayo yokufaka izinsimbi eziwuketshezi ezinhlobonhlobo zama-substrates zama-elekthronikhi anwebekayo nezinye izinhlelo zokusebenza ezivelayo.
Ama-substrates e-PDMS alungiswa ngokuxuba i-matrix ye-Sylgard 184 (i-Dow Corning, e-USA) kanye ne-hardener ngezilinganiso ezingu-10:1 kanye ne-15:1 zokuhlola okuqinile, okulandelwa ukwelapha kuhhavini elingu-60°C.Ithusi noma i-silicon yafakwa kumawafa e-silicon (i-Silicon Wafer, i-Namkang High Technology Co., Ltd., Republic of Korea) kanye nama-substrates e-PDMS anongqimba olunamathelayo lwe-titanium oluyi-10 nm kusetshenziswa isistimu yokufafaza yangokwezifiso.Izakhiwo zekholomu kanye ne-pyramidal zifakwa ku-substrate ye-PDMS kusetshenziswa inqubo ye-silicon wafer photolithographic.Ububanzi nobude bephethini yephiramidi ngu-25 no-18 µm, ngokulandelanayo.Ubude bephethini yebha bugxilwe kokuthi 25 µm, 10 µm, no-1 µm, futhi ububanzi bayo kanye nokuphakama kwahluka kusuka ku-25 kuya ku-200 µm.
I-engeli yokuxhumana ye-EGaIn (gallium 75.5%/indium 24.5%, >99.99%, Sigma Aldrich, Republic of Korea) ikalwe kusetshenziswa i-drop-shape analyzer (DSA100S, KRUSS, Germany). I-engeli yokuxhumana ye-EGaIn (gallium 75.5%/indium 24.5%, >99.99%, Sigma Aldrich, Republic of Korea) ikalwe kusetshenziswa i-drop-shape analyzer (DSA100S, KRUSS, Germany). Краевой угол EGaIn (галлий 75,5 %/индий 24,5 %, >99,99 %, Sigma Aldrich, Республика Корея) измеряли с помощью каплевидного каплевидного аналирссора,DLARUSSORD аналипублика Корея). I-engeli yonqenqema ye-EGaIn (i-gallium 75.5%/indium 24.5%, >99.99%, Sigma Aldrich, Republic of Korea) ikalwe kusetshenziswa i-droplet analyzer (DSA100S, KRUSS, Germany). EGaIn(镓75.5%/铟24.5%,>99.99%,Sigma Aldrich,大韩民国)的接触角使用滴形分析仪(DSA100S,KRUSS,徉。 I-EGaIn (gallium75.5%/indium24.5%, >99.99%, Sigma Aldrich, 大韩民国) ikalwe kusetshenziswa i-analyzer yokuxhumana (DSA100S, KRUSS, Germany). Краевой угол EGaIn (галлий 75,5%/индий 24,5%, >99,99%, Sigma Aldrich, Республика Корея) измеряли с помощью анализатора формRUSSDS 10,Dруская 10 Корея) I-engeli yonqenqema ye-EGaIn (gallium 75.5%/indium 24.5%, >99.99%, Sigma Aldrich, Republic of Korea) ikalwe kusetshenziswa i-shape cap analyzer (DSA100S, KRUSS, Germany).Beka i-substrate egumbini lengilazi elingu-5 cm × 5 × 5 cm futhi ubeke iconsi le-EGaIn elingu-4–5 μl ku-substrate usebenzisa isirinji engu-0.5 mm ububanzi.Ukwakha umhwamuko we-HCl, u-20 μL wesisombululo se-HCl (37 wt.%, i-Samchun Chemicals, Republic of Korea) yabekwa eduze kwe-substrate, eyahwamuka ngokwanele ukugcwalisa igumbi phakathi nemizuzwana eyi-10.
Indawo yakhiwe kusetshenziswa i-SEM (Tescan Vega 3, Tescan Korea, Republic of Korea).I-EDS (i-Tescan Vega 3, i-Tescan Korea, i-Republic of Korea) isetshenziselwe ukutadisha ukuhlaziywa kwekhwalithi okuyisisekelo nokusatshalaliswa.I-EGaIn/Cu/PDMS surface topography yahlaziywa kusetshenziswa i-optical profilometer (The Profilm3D, Filmetrics, USA).
Ukuze kuphenywe ngoshintsho ekuphatheni kukagesi phakathi nemijikelezo yokwelula, amasampula ane-EGaIn nangenayo aye aboshelwa kumshini wokunwebeka (Bending & Stretchable Machine System, SnM, Republic of Korea) futhi axhunywe ngogesi kumitha yomthombo we-Keithley 2400. Ukuze kuphenywe ngoshintsho ekuphatheni kukagesi phakathi nemijikelezo yokwelula, amasampula ane-EGaIn nangenayo aye aboshelwa kumshini wokunwebeka (Bending & Stretchable Machine System, SnM, Republic of Korea) futhi axhunywe ngogesi kumitha yomthombo we-Keithley 2400. Для исследования изменения электропроводности во время циклов растяжения образцы с EGaIn and без него закрепляли на оборудования для, Репляли на оборудовании для публика Корея) futhi электрически подключали к измерителю источника Keithley 2400. Ukuze kufundwe ushintsho ekuphatheni kukagesi phakathi nemijikelezo yokwelula, amasampula ane-EGaIn nangenayo afakwa emshinini wokunwebeka (Bending & Stretchable Machine System, SnM, Republic of Korea) futhi axhunywe ngogesi kumitha yomthombo we-Keithley 2400.Ukuze kufundwe ushintsho ekuphatheni kukagesi phakathi nemijikelezo yokwelula, amasampula ane-EGaIn nangenayo afakwe kudivayisi enwebekayo (I-Bending and Stretching Machine Systems, SnM, Republic of Korea) futhi axhunywe ngogesi ku-Keithley 2400 SourceMeter.Ikala ushintsho lokumelana ebangeni elisuka ku-0% liye ku-70% lohlobo lwesampula.Ukuze kuhlolwe ukuzinza, ukuguqulwa kokumelana kukalwe ngaphezu kwemijikelezo yobunzima engu-4000 30%.
Ukuze uthole ulwazi olwengeziwe mayelana nesakhiwo sokutadisha, bheka i-abstract yocwaningo lwezeMvelo exhunywe kulesi sihloko.
Idatha esekela imiphumela yalolu cwaningo yethulwa kokuthi Ulwazi Olwengeziwe kanye namafayela e-Raw Data.Lesi sihloko sinikeza idatha yoqobo.
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Isikhathi sokuthumela: Dec-13-2022
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